to-220-3l plastic-encapsulate mosfets IRF740 n-channel power mosfet general description the IRF740 power mosfet is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc. feature z high current rating z ultra lower r ds(on) z good stability and uniformity with high e as z excellent package for good heat dissipation z fast switching application z power switching application z load switching in high circuit application z dc/dc converters maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 400 v gate-source voltage v gs 20 continuous drain current i d 10 a pulsed drain current i dm 40 single pulsed avalanche energy (note1) e as 570 mj thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperure for soldering purposes , 1/8?from case for 5 seconds t l 260 to-220-3l 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 400 v zero gate voltage drain current i dss v ds =400v, v gs =0v 25 a v ds =0.8xratedv (br)dss ,v gs =0v,t j =125 250 a gate-body leakage current i gss v ds =0v, v gs = 20v 500 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2 4 v static drain-source on-resistance r ds(on) v gs =10v, i d =5.2a 380 550 m ? forward transconductance g fs v ds =50v, i d =5.2a 5.8 s dynamic characteristics (note 3) input capacitance c iss v ds =25v,v gs =0v,f =1mhz 1170 pf output capacitance c oss 160 reverse transfer capacitance c rss 26 switching characteristics (note 2,3) turn-on delay time t d (on) v dd =200v, v gs =10v, r g =9.1 ? , r l =20 ? , i d =10a 65 ns turn-on rise time t r 130 turn-off delay time t d(off) 240 turn-off fall time t f 145 total gate charge q g v gs =10v,i d =10a,i g(ref) =1.5ma v ds = 0.8 x rated bv dss gate charge is essentially independent of operating temperature 138 nc gate to source charge q gs 35 gate to drain ?miller? charge q gd 35 drain-source diode characteristics drain-source diode forward voltage(note2) v sd v gs = 0v, i s =10a 2 v continuous drain-source diode forward current(note4) i s 10 a pulsed drain-source diode forward current i sm 40 a notes : 1. i l =10a, v dd =50v, r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not subject to production 4. surface mounted on fr4 board, t 10s 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
01234567 0.0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 345678910 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 12345678910 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 012345678910 0 1 2 3 4 5 6 7 8 9 10 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 0.5 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =5.2a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =5.5v pulsed IRF740 output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 10v 6v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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